2450 MHz, 12.5 W CW, 28 V RF LDMOS Integrated Power Amplifier

  • Not Recommended for New Designs
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Product Details

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  • High gain simplifies layout and reduced PCB area compared to a discrete design
  • Qualified up to a maximum of 32 VDD operation
  • On-chip input and interstage matching (50 ohm input)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Integrated ESD protection
  • 150°C case and junction temperature ratinge
  • Ideal as a driver for high power RF energy applications
  • RoHS compliant
  • Driver for consumer and commercial cooking applications
  • Driver for industrial heating applications, such as sterilization, pasteurization, drying, moisture-leveling process, curing and welding
  • Driver for medical applications, such as microwave ablation, renal denervation and diathermy
  • Final stage for portable heating devices and portable medical systems

RF Performance Table

Typical Performance

VDD = 28 Vdc, Pin = 11 dBm, IDQ1 = 15 mA, IDQ2 = 75 mA
Signal Type Gps


Quick reference to our documentation types.

5 documents

Design Resources

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Design Files

1-5 of 8 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MHT2012N S-Parameters

  • Models

    MHT2012N RF High-Power Model AWR Product Model Design Kit

  • Models

    MHT2012N RF High-Power Model ADS Product Model Design Kit

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