1805-1880 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor

  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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Product Details

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  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty single-carrier W-CDMA performance: VDD = 28 Vdc, IDQA = 700 mA, VGSB = 0.6 Vdc, Pout = 63 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.


Quick reference to our documentation types.

5 documents

Design Resources

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Design Files

5 design files

  • Models

    A3T18H360W23S Peaking Class C S-Parameters

  • Models

    A3T18H360W23S Peaking Class AB S-Parameters

  • Models

    A3T18H360W23S Carrier S-Parameters

  • Printed Circuit Boards and Schematics

    A3T18H360W23S 1800 MHz PCB dxf file

  • Calculators

    A3T18H360W23S RF Power Electromigration MTTF Calculation Program


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