1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor


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Product Details

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  • Low thermal resistance version of MRFX1K80H using NXP's OM-1230 over-molded plastic package
  • Based on new 65 V LDMOS technology, designed for ease of use
  • Characterized from 30 to 65 V for extended power range
  • Unmatched input and output
  • High breakdown voltage for enhanced reliability and higher efficiency architectures
  • High drain-source avalanche energy absorption capability
  • High ruggedness. Handles 65:1 VSWR.
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar

RF Performance Tables

Typical Performance

Signal Type VDD
87.5-108 (1,2)CW601670 CW23.883.5
230 (3)Pulse
(100 µsec, 20% Duty Cycle)
651800 Peak24.475.7

Load Mismatch/Ruggedness

Signal Type VSWR Pin
230(3) Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles 14 Peak
(3 dB Overdrive)
65 No Device Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband production test fixture.


Quick reference to our documentation types.

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Design Resources

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Design Files

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  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRFX1K80N RF High-Power Model AWR Product Model Design Kit

  • Models

    MRFX1K80N S-Parameters

  • Models

    MRFX1K80N RF High-Power Model ADS Product Model Design Kit

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