700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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  • Internally input matched for ease of use
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50 VDD operation
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection
  • RoHS Compliant
  • 915 MHz industrial heating/welding systems
  • 1300 MHz particle accelerators
  • 900 MHz TETRA base stations

Part numbers include: MRF8VP13350GN, MRF8VP13350N.

RF Performance Tables

1300 MHz

VDD = 50 Vdc

915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc

Load Mismatch/Ruggedness

1. Measured in 1300 MHz pulse narrowband test circuit.


Quick reference to our documentation types.

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Design Resources

Design Files

5 design files


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