100 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor
Contact support, your local sales representative or an NXP Authorized Distributor for product availability.
These devices, MRF101AN and MRF101BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.
Product Details
Features
- Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
- Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
- RoHS compliant
- Industrial, scientific, medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding and drying systems
- Radio and VHF TV broadcast
- HF and VHF communications
- Switch mode power supplies
RF Performance Tables
Typical Performance
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
Reference Circuit Part Number |
Detailed Data |
| 13.56 | CW | 130 CW | 27.1 | 79.6 | MRF101AN-13MHZ | Tool Summary Page |
| 27 | CW | 125 CW | 24.9 | 79.6 | MRF101AN-27MHZ | |
| 40.68 | CW | 120 CW | 23.8 | 81.5 | MRF101AN-40MHZ | |
| 50 | CW | 119 CW | 22.8 | 82.1 | MRF101AN-50MHZ | |
| 81.36 | CW | 130 CW | 23.2 | 80.8 | MRF101AN-81MHZ | |
| 87.5-108 | CW | 115 CW | 20.6 | 76.8 | MRF101AN-88MHZ | |
| 136-174 | CW | 104 CW | 21.2 | 76.5 | MRF101AN-VHF | |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | 115 Peak | 21.1 | 76.7 | MRF101AN-230MHZ |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (dBm) |
Test Voltage |
Result |
| 40.68 | CW | > 65:1 at all Phase Angles | 0.64 CW | 50 | No Device Degradation |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles | 1.8 Peak (3 dB Overdrive) | 50 | No Device Degradation |
Buy/Parametrics
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