1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor
1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor
Contact support, your local sales representative or an NXP Authorized Distributor for product availability.
The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.
Product Details
Features
- Based on new 65 V LDMOS technology, designed for ease of use
- Characterized from 30 to 65 V for extended power range
- Unmatched input and output
- High breakdown voltage for enhanced reliability and higher efficiency architectures
- High drain-source avalanche energy absorption capability
- High ruggedness. Handles 65:1 VSWR.
- RoHS compliant
- Lower thermal resistance option in over-molded plastic package: MRFX1K80N
- Industrial, scientific, medical (ISM)
- Laser generation
- Plasma generation
- Particle accelerators
- MRI, RF ablation and skin treatment
- Industrial heating, welding and drying systems
- Radio and VHF TV broadcast
- Aerospace
- HF communications
- Radar
RF Performance Tables
Typical Performance
| Frequency (MHz) |
Signal Type | VDD (V) |
Pout (W) |
Gps (dB) |
ηD (%) |
Reference Circuit Part Number |
| 27 | CW | 65 | 1800 CW | 27.8 | 75.6 | MRFX1K80H-27MHZ |
| 64 | Pulse (100 µsec, 10% Duty Cycle) | 65 | 1800 Peak | 27.1 | 69.5 | MRFX1K80H-64MHZ |
| 81.36 | CW | 62 | 1800 CW | 25.1 | 78.7 | MRFX1K80H-81MHZ |
| 87.5-108 | CW | 60 | 1600 CW | 23.6 | 82.5 | MRFX1K80H-88MHZ |
| 123/128 | Pulse (100 µsec, 10% Duty Cycle) | 65 | 1800 Peak | 25.9 | 69.0 | MRFX1K80H-128MHZ |
| 175 | CW | 60 | 1560 CW | 23.5 | 75.9 | MRFX1K80H-175MHZ |
| 174-230 Doherty | DVB-T (8k OFDM) | 63 | 250 Avg. | 21.3 | 43.3 | MRFX1K80H-VHFDHY |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | 65 | 1800 Peak | 25.1 | 75.1 | MRFX1K80H-230MHZ |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage | Result |
| 230 | Pulse (100 µsec, 20% Duty Cycle) |
> 65:1 at all Phase Angles | 14 W Peak (3 dB Overdrive) |
65 | No Device Degradation |
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