A3T21H360W23S|2110-2200 MHz, 56 W Avg, 28 V

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A3T21H360W23S

The A3T21H360W23S 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.

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Data Sheet

Application Notes

Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 600 mA, V_GSB = 0.6 Vdc, P_out = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	16.4	52.0	7.7	–29.3
2140 MHz	16.6	51.7	7.6	–30.2
2170 MHz	16.7	50.7	7.3	–30.7
2200 MHz	16.5	49.6	7.2	–31.1

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

Data Sheet
A3T21H360W23S 2110-2200 MHz, 56 W Avg, 28 V Data Sheet

PDFRev 0Aug 29, 2017406.5 KBA3T21H360W23SEnglish
Application Note
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

PDFRev 1Feb 24, 2011664.6 KBAN1908English
Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
Package Information
98ASA00974D, ACP-1230S-4L2S

PDFRev AJun 21, 201773.9 KBSOT1800-4English

Design Resources

Design Files

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5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A3T21H360W23S Peaking Class C S-Parameters

S2PRev 0Aug 29, 2017 00:00:0048.0 KBA3T21H360W23S-PEAKING-CLASS-C

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Models
A3T21H360W23S Peaking Class AB S-Parameters

S2PRev 0Aug 29, 2017 00:00:0048.0 KBA3T21H360W23S-PEAKING-CLASS-AB

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Models
A3T21H360W23S Carrier S-Parameters

S2PRev 0Aug 29, 2017 00:00:0048.0 KBA3T21H360W23S-CARRIER

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Printed Circuit Boards and Schematics
A3T21H360W23S 2100 MHz PCB DXF file

ZIPRev 0Aug 29, 2017 00:00:0036.1 KBA3T21H360W23S-2100-PCB

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Calculators
A3T21H360W23S RF Power Electromigration MTTF Calculation Program

XLSXRev 0Sep 5, 2017 00:00:0081.1 KBA3T21H360W23S_MTTF_CALC

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2110-2200 MHz, 56 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

A3T21H360W23S 2110-2200 MHz, 56 W Avg, 28 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T21H360W23S Peaking Class C S-Parameters

A3T21H360W23S Peaking Class AB S-Parameters

A3T21H360W23S Carrier S-Parameters

A3T21H360W23S 2100 MHz PCB DXF file

A3T21H360W23S RF Power Electromigration MTTF Calculation Program

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Support

What do you need help with?

Suggested Links

2110-2200 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

A3T21H360W23S 2110-2200 MHz, 56 W Avg, 28 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T21H360W23S Peaking Class C S-Parameters

A3T21H360W23S Peaking Class AB S-Parameters

A3T21H360W23S Carrier S-Parameters

A3T21H360W23S 2100 MHz PCB DXF file

A3T21H360W23S RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

2110-2200 MHz, 56 W Avg., 28 V Airfast^® RF Power LDMOS Transistor