MRF300AN: 300 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor

Overview

Features

TO-247-3L: MRF300AN and MRF300BN

TO-247-3L: MRF300AN and MRF300BN

MRF300AN Reference Circuits (same PCB)

MRF300AN Reference Circuits (same PCB)

Push-pull Configuration using MRF300AN and MRF300BN

Push-pull Configuration using MRF300AN and MRF300BN

Package Mounting Examples

Package Mounting Examples

Standard Packages for RF Power

Standard Packages for RF Power thumbnail

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    250
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    20.4 @ 230
  • Efficiency (Typ) (%)
    75.5
  • Thermal Resistance (Spec) (℃/W)
    0.55
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
27CW340 CW27.380.6
40.68 (1)CW330 CW28.279.0
81.36CW310 CW26.076.5
230 (2)Pulse
(100 µsec, 20% Duty Cycle)
330 Peak20.475.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
40.68Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles2 Peak
(3 dB Overdrive)
50No Device Degradation
230Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles6 Peak
(3 dB Overdrive)
50No Device Degradation
1. Measured in 40.68 MHz narrowband reference circuit.
2. Measured in 230 MHz typical narrowband fixture.