960-1215 MHz, 500 W, 50 V Pulse RF Power LDMOS Transistors

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Product Details


  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant

Part numbers include: MRF6V12500GS, MRF6V12500H, MRF6V12500HS.

RF Performance Table

Typical Pulse Performance

VDD = 50 Volts, IDQ = 200 mA 1. Minimum output power for each specified pulse condition.
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power


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Design Files

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