960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

MRF6V12250H

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Product Details

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Features

  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 100 mA, Pout = 275 Watts Peak (27.5 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 20.3 dB
    Drain Efficiency: 65.5%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak Power
  • Typical Broadband Performance: VDD = 50 Volts, IDQ = 100 mA, Pout = 250 Watts Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 19.8 dB
    Drain Efficiency: 58%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

Key Parametrics

  • Frequency (Min) (MHz)
    960
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.4
  • P1dB (Typ) (W)
    275
  • Die Technology
    LDMOS

Design Resources

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Documentation

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Design Files

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