AFM906N|6 W CW, 136-941 MHz, 7.5 V

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AFM906N

The AFM906N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

See product image

Data Sheet

Application Notes

Product Details

Features

Characterized for operation from 136 to 941 MHz
Unmatched input and output allowing wide frequency range utilization
Integrated ESD protection
Integrated stability enhancements
Wideband — full power across the band
Exceptional thermal performance
Extreme ruggedness
High linearity for: TETRA, SSB
RoHS compliant

Output stage VHF band handheld radio
Output stage UHF band handheld radio
Output stage for 700-800 MHz handheld radio
Generic 6 W driver for ISM and broadcast final stage transistors

Part numbers include: AFM906N.

RF Performance Tables

Wideband Performance

(In 440-520 MHz reference circuit, 7.5 Vdc, T_A = 25°C, CW)

Frequency (MHz)	P_in (W)	G_ps (dB)	η_D (%)	Pout (W)
440-520^(1,2)	0.16	16.2	62.0	6.5

Narrowband Performance

(7.5 Vdc, I_DQ = 100mA, T_A = 25°C, CW)

Frequency (MHz)	G_ps (dB)	η_D (%)	Pout (W)
520⁽³⁾	20.3	70.8	6.8

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (dBm)	Test Voltage	Result
520⁽³⁾	CW	> 65:1 at all Phase Angles	21 (3 dB Overdrive)	10.8	No Device Degradation

1. Measured in 440-520 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 520 MHz narrowband production test fixture.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

^{Data Sheet}
AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet

PDFRev 2Nov 2, 2018870.0 KBAFM906NEnglish
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins

PDFRev BJul 27, 201651.9 KBSOT1862-1English

Design Resources

Design Files

Quick reference to our design files types.

1-5 of 8 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

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AFM906N S-Parameters

S2PRev 0Apr 14, 2017 00:00:0011.2 KBAFM906N-SP
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AFM906N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00103.0 KBAFM906N_MDL_ADS
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AFM906N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 2016 00:00:00360.2 KBAFM906N_MDL_AWR
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^{Printed Circuit Boards and Schematics}
AFM906N 440-520 MHz PCB DXF file

ZIPRev 0Aug 10, 2016 00:00:0022.9 KBAFM906N_440_520_PCB
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^{Printed Circuit Boards and Schematics}
AFM906N 520 MHz Narrowband PCB DXF file

ZIPRev 0Jul 28, 2016 00:00:00390.9 KBAFM906N_520NB_PCB
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^Calculators
AFM906N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 28, 2016 00:00:0033.2 KBAFM906N_MTTF_CALC
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Show All

6 W CW over 136-941 MHz, 7.5 V Wideband Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

Wideband Performance

Narrowband Performance

Load Mismatch/Ruggedness

Buy/Parametrics

Documentation

Filter by

AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFM906N S-Parameters

AFM906N RF High-Power Model ADS Product Model Design Kit

AFM906N RF High-Power Model AWR Product Model Design Kit

AFM906N 440-520 MHz PCB DXF file

AFM906N 520 MHz Narrowband PCB DXF file

AFM906N RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

6 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

Wideband Performance

Narrowband Performance

Load Mismatch/Ruggedness

Buy/Parametrics

Documentation

Filter by

AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFM906N S-Parameters

AFM906N RF High-Power Model ADS Product Model Design Kit

AFM906N RF High-Power Model AWR Product Model Design Kit

AFM906N 440-520 MHz PCB DXF file

AFM906N 520 MHz Narrowband PCB DXF file

AFM906N RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

6 W CW over 136-941 MHz, 7.5 V Wideband Airfast^® RF Power LDMOS Transistor