A2T07D160W04S: 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-4 Image

NI-780S-4 Image

Key Parametrics

  • Frequency (Min) (MHz)
    716
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    49
  • P1dB (Typ) (W)
    79
  • P3dB (Typ) (dBm)
    52.7
  • P3dB (Typ) (W)
    186
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    30.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    21.5 @ 803
  • Efficiency (Typ) (%)
    48.5
  • Thermal Resistance (Spec) (℃/W)
    0.63
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Tables

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.2 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

880 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.3 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.