MRFX035H|35 W CW, 1.8-512 MHz, 65 V

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MRFX035H

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The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 512 MHz.

Data Sheet

Application Notes

Product Details

Features

Unmatched input and output allowing wide frequency range utilization
50 ohm native output impedance
Qualified up to a maximum of 65 V_DD operation
Characterized from 30 to 65 V for extended power range
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
RoHS compliant

Industrial, scientific, medical (ISM)
- Laser generation
- Plasma generation
- Particle accelerators
- MRI, RF ablation and skin treatment
- Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
- HF communications
- Radar
Mobile Radio
- HF and VHF communications
- PMR base stations

Part numbers include: MRFX035H, MRFX035H-2MHZ, MRFX035H-30MHZ.

RF Performance Tables

Typical Performance

V_DD = 65 Vdc

Frequency (MHz)	Signal Type	P_out (W)	G_ps (dB)	η_D (%)
1.8-54^(1,2)	CW	32 CW	24.1	58.1
30-512⁽²⁾	CW	26 CW	15.1	42.3
230⁽³⁾	CW	35 CW	24.8	75.8

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	P_in (dBm)	Test Voltage	Result
230⁽³⁾	CW	> 65:1 at all Phase Angles	23.5 (3 dB Overdrive)	65	No Device Degradation

1. Measured in 1.8-54 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

^{Data Sheet}
MRFX035H 35 W CW, 1.8-512 MHz, 65 V Data Sheet

PDFRev 0Dec 17, 2018495.2 KBMRFX035HEnglish
^{Application Note}
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

PDFRev 1Feb 24, 2011664.6 KBAN1908English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB

PDFRev ONov 5, 201449.4 KBSOT1791-1English

Design Resources

Design Files

Quick reference to our design files types.

1-5 of 6 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
MRFX035H S-Parameters

S2PRev 0Dec 17, 2018 00:00:006.5 KBMRFX035H_SP
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^{Printed Circuit Boards and Schematics}
MRFX035H 1.8-54 MHz PCB DXF file

ZIPRev 0Dec 17, 2018 00:00:005.8 KBMRFX035H-1.8-54-PCB
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^{Printed Circuit Boards and Schematics}
MRFX035H 1.8-54 MHz Reference Circuit Design Files

ZIPRev 0Sep 20, 2019 00:00:001.4 MBMRFX035H-1.8-54-MHz-Reference-Circuit
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^{Printed Circuit Boards and Schematics}
MRFX035H 230 MHz PCB DXF file

ZIPRev 0Dec 17, 2018 00:00:0010.2 KBMRFX035H-230-PCB
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^{Printed Circuit Boards and Schematics}
MRFX035H 30-400 MHz Reference Circuit Design Files

ZIPRev 0Sep 28, 2019 00:00:002.4 MBMRFX035H-30-400-MHz-Reference-Circuit
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^Calculators
MRFX035H RF Power Electromigration MTTF Calculation Program

XLSXRev 0Dec 17, 2018 00:00:0039.6 KBMRFX035H_MTTF_CALC
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35 W CW over 1.8-512 MHz, 65 V Wideband RF Power LDMOS Transistor